VERTICAL IGBT WITH COMPLEMENTARY CHANNEL FOR HOLE EXTRACTION

Abstract: the semiconductor device comprises a semiconductor body with a top side, a main electrode on the top side and a gate electrode. the semiconductor body comprises a drift layer of a first conductivity type, a first base region of a second conductivity type, a second base region of the first conductivity type, a first contact region of the first conductivity type and a second contact region of the second conductivity type. the second base region has a greater doping concentration than the drift layer. the first contact region adjoins the first base region and the top side. the second contact region adjoins the second base region and the top side. the main electrode is in electrical contact with the first and the second contact region. in a first lateral direction, at least a portion of the gate electrode is arranged between the first contact region and the second contact region.

Inventor(s): Gaurav GUPTA

CPC Classification: H10D84/82 (No explanation available)

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