IRRADIATION-RESISTANT GaN HEMT WITH DECOUPLING REVERSE CONDUCTION CAPABILITY AND FABRICATING METHOD THEREOF

Abstract: the present invention discloses an irradiation-resistant gan hemt with decoupling reverse conduction capability and a fabricating method thereof. first gate region metal and second gate region metal are sectionally distributed on a p-type gallium nitride layer in a gate region of the transistor, where the first gate region metal consists of first schottky metal layers and second ohmic metal layers, and the second gate region metal only consists of a second schottky metal layer; dielectric layers are filled between the first gate region metal and the second gate region metal, an interconnection metal layer is arranged above the first gate region metal and is connected to an interconnection metal layer above a source to form a reverse freewheeling diode; and gate metal layers are arranged above the second gate region metal and are used as a real gate of the transistor.

Inventor(s): Feng ZHOU, Yu RONG, Hai LU, Weizong XU, Dong ZHOU, Fangfang REN

CPC Classification: H10D84/811 (No explanation available)

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