20250169156. High Electron M (Texas Instruments Incorporated)

HIGH ELECTRON MOBILITY TRANSISTOR WITH INTEGRATED DIODE

Abstract: a semiconductor device includes a substrate, a semiconductor layer stack on the substrate, and a gate, a source, and a drain formed on or in the semiconductor layer stack. the semiconductor layer stack may include a non-silicon channel layer and a barrier layer on the channel layer. at least one of the substrate or the semiconductor layer stack includes a diode, a first terminal of the diode electrically coupled to the source, and a second terminal of the diode electrically coupled to the drain.

Inventor(s): Zhikai Tang, Ujwal Radhakrishna, Jungwoo Joh, Timothy Merkin

CPC Classification: H10D84/01 (No explanation available)

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