METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

Abstract: a semiconductor device including a gate structure disposed on a substrate is provided. the gate structure includes a work function setting layer and a work function tuning layer sequentially disposed on substrate. the work function tuning layer is in contact with an interface surface positioned between the work function setting layer and the work function tuning layer, and a material of the interface surface is different from the work function setting layer.

Inventor(s): Chung-Ting Ko, Bi-Fen Wu, Chi-On Chui

CPC Classification: H10D64/667 (No explanation available)

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