SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Abstract: a method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer adjacent to the gate structure, wherein the first spacer comprises silicon carbon nitride (sicn); forming a second spacer adjacent to the first spacer, wherein the second spacer comprises silicon oxycarbonitride (siocn); and forming a source/drain region adjacent to two sides of the second spacer.

Inventor(s): Chia-Ming Kuo, Po-Jen Chuang, Yu-Ren Wang, Ying-Wei Yen, Fu-Jung Chuang, Ya-Yin Hsiao, Nan-Yuan Huang

CPC Classification: H10D64/021 (No explanation available)

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