METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Abstract: a first conductive pattern is formed on a semiconductor substrate and formed from a first conductive film. a second conductive film having a first portion on the semiconductor substrate, a second portion on an upper surface of the first conductive pattern, and a third portion connecting the first portion and the second portion so as to cover a side surface of the first conductive pattern, is formed. the upper surface of the third portion is higher than the upper surface of the first portion. the second portion is patterned. the second portion and a part of the third portion are selectively removed. by patterning the first conductive pattern and the second conductive film, a first gate electrode is formed from a part of the first conductive pattern, and a second gate electrode is formed from a part of the first portion.

Inventor(s): Takahiro MARUYAMA, Toshiya SAITO, Takuya MARUYAMA

CPC Classification: H10D64/01 (No explanation available)

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