TRENCH GATE POWER MOSFET AND MANUFACTURING METHOD THEREFOR

Abstract: a trench gate power mosfet, including: a substrate provided with a hexagonal wide bandgap semiconductor of a first conductivity type; an epitaxial layer grown on the substrate and of the first conductivity type; a body region formed on the epitaxial layer and of a second conductivity type; a trench formed in the body region by etching, where a length direction of the trench is parallel to a projection, on the surface of a wafer, of the c axis; a second conductivity-type pillar formed by implanting first ions into a bottom region of the trench along the c axis of the hexagonal wide bandgap semiconductor material, where the bottom region of the trench is located below the trench, and is connected to the bottom of the trench, and the longitudinal depth of the second conductivity-type pillar is at least not less than 50% of the thickness of the epitaxial layer located in the bottom region of the trench; and a trench gate formed by filling the trench with a filler.

Inventor(s): Yongxi Zhang, Wei Chen, Haitao Huang

CPC Classification: H10D62/111 (No explanation available)

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