GATE TRENCH POWER SEMICONDUCTOR DEVICES WITH DEEP JFET PATTERNS

Abstract: a semiconductor device comprises a semiconductor layer structure comprising a drift region having a first conductivity type, a well region having a second conductivity type on the drift region, and a first jfet region having the first conductivity type, and a gate trench extending into the semiconductor layer structure. an upper surface of the first jfet region is positioned below the gate trench. a first conductivity dopant concentration of the first jfet region exceeds a first conductivity dopant concentration of the drift region.

Inventor(s): Naeem Islam, Woongsun Kim, Madankumar Sampath, Sei-Hyung Ryu

CPC Classification: H10D62/111 (No explanation available)

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