20250169123. Semiconductor De (Samsung Electronics ., .)

SEMICONDUCTOR DEVICE

Abstract: the present disclosure relates to semiconductor devices. an example semiconductor device includes a channel layer, a barrier layer on the channel layer including a material having a different energy band gap than a material included in the channel layer, a gate electrode on the barrier layer, a gate semiconductor layer between the barrier layer and the gate electrode, a protection layer on the barrier layer and the gate electrode, a source electrode and a drain electrode on both sides of the gate electrode and extending through the protection layer to cover the side surfaces of the channel layer and the barrier layer, and a diffusion barrier layer within the protection layer covering the barrier layer and the gate electrode and including nitrogen.

Inventor(s): Seong Seok Yang, Sanghyun Kim, Jongseob Kim, Joonyong Kim, Junhyuk Park, Jaejoon Oh, Jung-Wook Lee

CPC Classification: H10D62/10 (No explanation available)

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