TRANSISTOR DEVICES WITH MULTI-LAYER INTERLAYER DIELECTRIC STRUCTURES

Abstract: a method includes forming a first dielectric layer of an interlayer dielectric (ild) structure of a transistor device, wherein forming the first dielectric layer includes forming a first sublayer including a first dielectric material on a gate structure and forming a second sublayer including the first dielectric material on the first sublayer, wherein forming the first sublayer includes depositing the first dielectric material of the first sublayer at a first deposition rate, and wherein forming the second sublayer includes depositing the first dielectric material of the second sublayer at a second deposition rate less than the first deposition rate, and forming a second dielectric layer of the ild structure by forming a third sublayer including a second dielectric material on the first dielectric layer using a third deposition rate, wherein the second dielectric material is different from the first dielectric material.

Inventor(s): Yun-Chu Tsai, Dejiu Fan, Jung Bae Kim, Yang Ho Bae, Rodney Shunleong Lim, Dong Kil Yim

CPC Classification: H10D30/6757 (No explanation available)

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