SEMICONDUCTOR DEVICE

Abstract: a semiconductor device with favorable electrical characteristics is provided. a semiconductor device with stable electrical characteristics is provided. a highly reliable display device is provided. the semiconductor device includes a first conductive layer, a first insulating layer, a semiconductor layer, and a pair of second conductive layers. the first insulating layer is in contact with a top surface of the first conductive layer. the semiconductor layer is in contact with a top surface of the first insulating layer. the pair of second conductive layers are in contact with a top surface of the semiconductor layer. the pair of second conductive layers are apart from each other in a region overlapping with the first conductive layer. the semiconductor layer contains indium and oxygen and has a composition falling within a range obtained by connecting first coordinates (1:0:0), second coordinates (2:1:0), third coordinates (14:7:1), fourth coordinates (7:2:2), fifth coordinates (14:4:21), sixth coordinates (2:0:3), and the first coordinates in this order with a straight line in a ternary diagram showing atomic ratios of indium to an element m and zinc. in addition, the element m is one or more of gallium, aluminum, yttrium, and tin.

Inventor(s): Shunpei YAMAZAKI, Toshimitsu OBONAI, Junichi KOEZUKA, Kenichi OKAZAKI

CPC Classification: H10D30/6755 (No explanation available)

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