SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Abstract: a method includes forming a plurality of fin structures extending along a first direction. the method includes forming a dummy fin structure disposed between two adjacent fin structures. the dummy fin structure also extends along the first direction and includes a deformable layer. the method includes recessing portions of each fin structure. the method includes forming source/drain structures over the recessed fin structures. the method includes deforming the deformable layer of the dummy fin structure to apply either a tensile stress or a compressive stress on the source/drain structures coupled to each of the two adjacent fin structures.

Inventor(s): Yi-Ruei Jhan, Kuan-Ting Pan, Kuo-Cheng Chiang, Kuan-Lun Cheng, Chih-Hao Wang

CPC Classification: H10D30/0243 (No explanation available)

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