SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Abstract: a semiconductor fabrication method includes: providing a separating wall and a plurality of liners including a first liner and a second liner between a first fin and a second fin having an epitaxial stack and a sacrificial gate stack over channel regions of the second fin; recessing a sacrificial epitaxial layer of the epitaxial stack to form a cavity; recessing the first line thereby expanding the cavity; recessing the second liner thereby expanding the cavity; forming inner spacer material in the first and second cavities; forming source/drain features; and replacing the sacrificial epitaxial layer and the sacrificial gate stack with a metal gate layer; wherein the metal gate layer has a first critical dimension (cd) measured between the inner spacer material, and wherein the first liner after recessing has a second cd measured between the inner spacer material that is approximately equal to the first cd.

Inventor(s): Shu-Uei Jang, Shih-Yao Lin

CPC Classification: H10D30/024 (No explanation available)

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