METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PLASMA PROCESSING METHOD

Abstract: a method of manufacturing step of a device having a gate and a silicon substrate that are insulation-isolated from each other. in the method, germanium compositions of a silicon germanium sacrificial layer for forming a stacked channel and a germanium composition of a silicon germanium sacrificial layer for insulation-isolating the gate and the substrate are not changed. after the stacked film is etched, a protective dielectric film is formed on a sidewall of the stacked film, which is repeated using different protective film materials. thereafter, a silicon sacrificial layer and a silicon germanium sacrificial layer remaining in a lower portion are removed by isotropic etching to form a region in which the insulating isolation film is embedded. the steps from the formation of the stacked film of the protective dielectric films to the removal of the sacrificial layer by etching in the continuous process use the same apparatus.

Inventor(s): Makoto MIURA, Kiyohiko SATO, Kohei KAWAMURA, Satoshi SAKAI

CPC Classification: H10D30/0196 (No explanation available)

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