VERTICAL MEMORY DEVICE

Abstract: a vertical memory device includes a substrate; a stack structure comprising a plurality of isolation insulating layers and a plurality of word line plates which are alternately stacked on the substrate along a vertical direction; and a plurality of electrode structures disposed on the substrate. each of the plurality of electrode structures includes a single-crystal silicon filler extending on the substrate along the vertical direction, penetrating the plurality of isolation insulating layers and the plurality of word line plates, and contacting the substrate; and a plurality of variable resistance layers spaced apart from each other along the vertical direction, and partially covering a sidewall of the single-crystal silicon filler. each variable resistance layer is arranged between the single-crystal silicon filler and two of the word line plates.

Inventor(s): Bonjae KOO, Seulji SONG, Youngsun SONG

CPC Classification: H10B63/24 (ELECTRONIC MEMORY DEVICES)

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