PACKAGES FORMED USING RDL-LAST PROCESS

Abstract: a method includes bonding a first device die and a second device die to a substrate, and filling a gap between the first device die and the second device die with a gap-filling material. a top portion of the gap-filling material covers the first device die and the second device die. vias are formed to penetrate through the top portion of the gap-filling material. the vias are electrically coupled to the first device die and the second device die. the method further includes forming redistribution lines over the gap-filling material using damascene processes, and forming electrical connectors over and electrically coupling to the redistribution lines.

Inventor(s): Ming-Fa Chen, Chen-Hua Yu

CPC Classification: H01L25/0655 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (use of semiconductor devices for measuring ; resistors in general ; magnets, inductors or transformers ; capacitors in general ; electrolytic devices ; batteries or accumulators ; waveguides, resonators or lines of the waveguide type ; line connectors or current collectors ; stimulated-emission devices ; electromechanical resonators ; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers ; electric light sources in general ; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components ; use of semiconductor devices in circuits having a particular application, see the subclass for the application))

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