SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Abstract: a semiconductor device includes a base insulation layer including a first surface and a second surface facing the first surface, a channel layer on the first surface of the base insulation layer, source/drain patterns disposed in a first direction parallel to the first surface of the base insulation layer interposing the channel layer, a gate structure extending in a second direction crossing the first direction on the first surface of the base insulation layer and at least partially surrounding the channel layer, a gate separation pattern crossing the gate structure and at least partially penetrating the gate structure in a third direction perpendicular to the first direction and the second direction, and a through electrode at least partially penetrating the gate separation pattern in the third direction.

Inventor(s): YoungJun KIM, Sangjine Park, Jinmyoung Lee

CPC Classification: H01L23/642 ({Capacitive arrangements (, , , take precedence; capacitive effects between wiring layers on the semiconductor body )})

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