LASER DETECTING CIRCUIT AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME

Abstract: a laser detecting circuit is provided. the laser detecting circuit includes a latch circuit with a first inverter configured to invert a first output signal at a first node to generate a second output signal at a second node, and a second inverter configured to generate the first output signal based on the second output signal. the second inverter includes a plurality of pmos transistors connected in series between a first source voltage and the first node, and a plurality of nmos transistors. a gate of each of the plurality of pmos transistors is connected to the second node, and a drain of each of the plurality of nmos transistors is connected to the first node. the plurality of nmos transistors includes dummy nmos transistors and normal nmos transistors.

Inventor(s): Cheolhwan LIM, Kwangho KIM, Sangjin Lim, Haejung CHOI, Donghun HEO

CPC Classification: H01L23/576 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (use of semiconductor devices for measuring ; resistors in general ; magnets, inductors or transformers ; capacitors in general ; electrolytic devices ; batteries or accumulators ; waveguides, resonators or lines of the waveguide type ; line connectors or current collectors ; stimulated-emission devices ; electromechanical resonators ; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers ; electric light sources in general ; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components ; use of semiconductor devices in circuits having a particular application, see the subclass for the application))

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