SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Abstract: a semiconductor structure includes a substrate, stack structures, first spacers, a contact, and second spacers. the stack structures are located on the substrate and separated from each other. the stack structures include a bit line stack structure and a conductive line stack structure. the first spacers are located on sidewalls of the stack structures. each of the first spacers includes an oxide layer. the contact is located on the substrate between two adjacent first spacers. the top surface of the oxide layer is not higher than the top surface of the contact. the second spacers are located on the first spacers.

Inventor(s): Meng-Wei Kao, Keng-Ping Lin, Tzu-Ming Ou Yang, Shu-Ming Li

CPC Classification: H01L23/535 (including internal interconnections, e.g. cross-under constructions {(internal lead connections )})

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