CONTACT VIA FORMATION

Abstract: semiconductor devices and methods of forming the same are provided. in one embodiment, a semiconductor device includes an active region including a channel region and a source/drain region and extending along a first direction, and a source/drain contact structure over the source/drain region. the source/drain contact structure includes a base portion extending lengthwise along a second direction perpendicular to the first direction, and a via portion over the base portion. the via portion tapers away from the base portion.

Inventor(s): Lin-Yu Huang, Li-Zhen Yu, Chia-Hao Chang, Cheng-Chi Chuang, Kuan-Lun Cheng, Chih-Hao Wang

CPC Classification: H01L23/5283 ({Geometry or} layout of the interconnection structure {( takes precedence; algorithms )})

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