SOI SUBSTRATE AND RELATED METHODS

Abstract: implementations of a method of making a silicon-on-insulator (soi) die may include forming a plurality of grooves in a second side of a silicon substrate, depositing an insulative layer directly to the second side of the silicon substrate, the insulative layer filling the plurality of grooves, the silicon substrate comprising a first side opposite the second side, and singulating the silicon substrate through the plurality of grooves into a plurality of soi die. the insulative layer may be coupled to silicon only through the second side of the silicon substrate.

Inventor(s): Michael J. SEDDON, Mark GRISWOLD

CPC Classification: H01L23/5222 ({Capacitive arrangements or effects of, or between wiring layers (other capacitive arrangements )})

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