ENHANCHED THERMAL DISSIPATION IN FLIP-CHIP SEMICONDUCTOR DEVICES USING LASER DIRECT (LDS) STRUCTURING TECHNOLOGY

Abstract: a device includes a leadframe with a semiconductor die having a first side facing and electrically coupled to the leadframe and a second side facing away from the leadframe. an encapsulation body containing laser direct structuring (lds) material covers the semiconductor die and has an outer surface opposite the leadframe. metal vias are formed through the lds material between the outer surface and the second side of the semiconductor die, and a metal pad is formed at the outer surface. the metal vias and pad create a thermal dissipation path. the semiconductor die may be mounted in a flip-chip configuration and connected to the leadframe through metal pillars. the metal vias and pad may be formed by laser-activating the lds material followed by copper plating. the device can be configured as a quad flat no-leads (qfn) package, and a heat sink may be mounted on the metal pad.

Inventor(s): Michele DERAI, Dario VITELLO

CPC Classification: H01L23/29 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (use of semiconductor devices for measuring ; resistors in general ; magnets, inductors or transformers ; capacitors in general ; electrolytic devices ; batteries or accumulators ; waveguides, resonators or lines of the waveguide type ; line connectors or current collectors ; stimulated-emission devices ; electromechanical resonators ; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers ; electric light sources in general ; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components ; use of semiconductor devices in circuits having a particular application, see the subclass for the application))

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