METHOD OF FABRICATING CONTACT STRUCTURE

Abstract: a method of fabricating a contact structure includes the following steps. an opening is formed in a dielectric layer. a conductive material layer is formed within the opening and on the dielectric layer, wherein the conductive material layer includes a bottom section having a first thickness and a top section having a second thickness, the second thickness is greater than the first thickness. a first treatment is performed on the conductive material layer to form a first oxide layer on the bottom section and on the top section of the conductive material layer. a second treatment is performed to remove at least portions of the first oxide layer and at least portions of the conductive material layer, wherein after performing the second treatment, the bottom section and the top section of the conductive material layer have substantially equal thickness.

Inventor(s): Chang-Ting Chung, Shih-Wei Yeh, Kai-Chieh Yang, Yu-Ting Wen, Yu-Chen Ko, Ya-Yi Cheng, Min-Hsiu Hung, Chun-Hsien Huang, Wei-Jung Lin, Chih-Wei Chang, Ming-Hsing Tsai

CPC Classification: H01L21/76865 ({Selective removal of parts of the layer ( takes precedence)})

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