INTERCONNECT STRUCTURE, METHOD OF MANUFACTURING SAME, AND ELECTRONIC DEVICE INCLUDING SAME

Abstract: an interconnect structure including a dielectric layer having a trench structure; a conductive wiring including a metal compound represented by chemical formula 1 disposed within the trench structure (conductive interconnect), and air gap disposed between the conductive wiring. the trench structure has a line width of less than or equal to about 10 nm and an aspect ratio of greater than or equal to about 3.

Inventor(s): Keun Wook SHIN, Sangwon KIM, Joonseok KIM, Joonyun KIM, Daejin YANG, Chang Seok LEE, Tae Won JEONG, GIYOUNG JO, LUHING HU

CPC Classification: H01L21/7682 (Applying interconnections to be used for carrying current between separate components within a device {comprising conductors and dielectrics})

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