SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Abstract: a substrate processing apparatus includes: a processing container that accommodates a plurality of substrates arranged in multiple tiers; a processing gas supply pipe that extends along an arrangement direction of the plurality of substrates and supplies a processing gas into the processing container; and a pair of inert gas supply pipes that is provided at positions sandwiching the processing gas supply pipe therebetween along a circumferential direction of the plurality of substrates while extending along the arrangement direction, and supply an inert gas into the processing container. the pair of inert gas supply pipes are configured to inject the inert gas toward an inner surface of a sidewall of the processing container, so that the inner surface forms a flow of the inert gas in the circumferential direction of the plurality of substrates.

Inventor(s): Kazuya TAKAHASHI, Kuniyasu SAKASHITA, Atsushi ENDO, Junya KOJIMA

CPC Classification: H01L21/67017 ({Apparatus for fluid treatment (, take precedence)})

Search for rejections for patent application number 20250167009