Patterning Process

Abstract: the present invention is a patterning process including the steps of: providing an organic underlayer film, a silicon-containing hard mask, a silicon-containing antireflective film, and a photoresist film in this order on a substrate to be processed; forming a resist pattern in the photoresist film; forming a hard mask middle layer film pattern; forming an organic underlayer film pattern; and forming a pattern in the substrate to be processed, where the silicon-containing antireflective film is formed using a composition for forming a silicon-containing antireflective film containing a crosslinking agent and a polysiloxane containing any one or more of a repeating unit represented by the following general formula (sx-1), a repeating unit represented by the following general formula (sx-2), and a partial structure represented by the following general formula (sx-3). this provides a patterning process according to which it is possible to form a fine pattern without edge roughness.

Inventor(s): Naoki KOBAYASHI, Kanata TAKIZAWA, Ryo MITSUI, Daisuke KORI

CPC Classification: H01L21/3081 (using masks (, take precedence))

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