Edge structure of semiconductor wafer and manufacturing method thereof

Abstract: the invention provide an edge structure of a semiconductor wafer, which comprise a first substrate, an edge region and a device region are defined on that first substrate, a first material layer covers a first surface and a side surface of the edge region, and a second material layer covers the first material layer, the cross-sectional structure of the second material layer gradually decreases from the device region to the edge region.

Inventor(s): Yu-Ping Wang, Chuan-Lan Lin, Chu-Fu Lin, Teng-Chuan Hu, Kun-Ju Li

CPC Classification: H01L21/3043 ({Making grooves, e.g. cutting})

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