METHODS OF FORMING STRUCTURES INCLUDING VANADIUM BORIDE AND VANADIUM PHOSPHIDE LAYERS

Abstract: methods and systems for depositing a layer, comprising one or more of vanadium boride and vanadium phosphide, onto a surface of a substrate and structures and devices formed using the methods are disclosed. an exemplary method includes using a deposition process. the deposition process can include providing a vanadium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. exemplary structures can include field effect transistor structures, such as gate all around structures. the layer comprising one or more of vanadium boride and vanadium phosphide can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.

Inventor(s): Petro Deminskyi, Charles Dezelah, Jiyeon Kim, Giuseppe Alessio Verni, Maart Van Druenen, Qi Xie, Petri Räisänen

CPC Classification: H01L21/28088 (Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups - {(etching for patterning the electrodes , ; multistep manufacturing processes for data storage electrodes )})

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