DRY-DEVELOPING RESIST FILM FORMED OF METAL-CONTAINING RESIST

Abstract: a method for processing a substrate is disclosed. the method includes (a) providing a substrate on a substrate support in a processing chamber, the substrate having an underlying film and a resist film disposed on the underlying film and formed of a metal-containing resist, and the resist film having a first region and a second region. the method further includes (b) dry-developing the resist film by supplying a processing gas containing a carboxylic acid into the processing chamber, exposing the substrate to the carboxylic acid, and selectively removing the second region with respect to the first region. in the (b), a pressure or a partial pressure of the carboxylic acid is 0.3 torr (40 pa) or more and less than 100 torr (13,332 pa).

Inventor(s): Yuta NAKANE, Kenta ONO, Sho KUMAKURA, Tetsuya NISHIZUKA, Masanobu HONDA

CPC Classification: H01J37/32449 (Gas-filled discharge tubes (heating by discharge ))

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