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20250166975. Substrate Processing Ap (Tokyo Electron Limited)

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SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Abstract: a substrate processing apparatus includes a processing chamber having a substrate support configured to support a substrate, a gas supply configured to supply a plurality of processing gases to the processing chamber, a plasma generator configured to generate plasma of the processing gases, and a controller configured to control the gas supply. the gas supply includes a first gas supply configured to supply a first processing gas to the processing chamber, and a second gas supply configured to inject a second processing gas to the first processing gas supplied to the processing chamber.

Inventor(s): Lifu LI, Junya KURAMOTO, Takashi ARAMAKI, Hiroshi TSUJIMOTO

CPC Classification: H01J37/32449 (Gas-filled discharge tubes (heating by discharge ))

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