Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells

Abstract: a method used in forming a memory array comprising strings of memory cells comprises forming a lower portion of a stack that will comprise vertically-alternating first tiers and second tiers. the stack comprises laterally-spaced memory-block regions. material of the first tiers is of different composition from material of the second tiers. the lower portion comprises an upper second tier comprising insulative material. the vertically-alternating first tiers and second tiers of an upper portion of the stack are formed above the lower portion. channel-material strings are formed that extend through the upper portion to the lower portion. horizontally-elongated lines are formed in the upper second tier longitudinally-along opposing lateral edges of the memory-block regions. material of the lines is of different composition from that of the insulative material in the upper second tier that is laterally-between the lines. horizontally-elongated trenches are formed into the stack that are individually between immediately-laterally-adjacent of the memory-block regions and that extend through the upper portion to the lower portion. other embodiments, including structure independent of method, are disclosed.

Inventor(s): Alyssa N. Scarbrough, John D. Hopkins, Collin Howder, Jordan D. Greenlee

CPC Classification: G11C16/0483 ({comprising cells having several storage transistors connected in series})

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