EUV PHOTOMASK AND MANUFACTURING METHOD OF THE SAME

Abstract: a photomask and a method of manufacturing a photomask are provided. according to an embodiment, the method includes: providing a substrate; depositing a reflective layer including molybdenum layers and silicon layers over the substrate, the reflective layer including a first area and a second area laterally surrounding the first area from a top-view perspective; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and causing an energy to pass through the absorption layer, the capping layer and the reflective layer within the second area for forming molybdenum silicide in a border region of the reflective layer and keeping the absorption layer and the capping layer substantially intact.

Inventor(s): FENG YUAN HSU, TRAN-HUI SHEN, CHING-HSIANG HSU

CPC Classification: G03F1/24 (PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices ; photosensitive materials or processes for photographic purposes ; electrophotography, sensitive layers or processes therefor ))

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