20240051818. SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED)

SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

Inventor(s)

Hsi-Cheng Hsu of Taichung City (TW)

Chen-Wei Chiang of Hsinchu City (TW)

Jui-Chun Weng of Taipei City (TW)

Hsin-Yu Chen of Hsinchu City (TW)

Chia Yu Lin of Taoyuan (TW)

SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240051818 titled 'SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING

Simplified Explanation

The abstract describes a semiconductor device that includes a semiconductor layer, a micro-electromechanical systems (MEMS) structure defined in the semiconductor layer, a bond ring over the semiconductor layer, and a cap structure over the MEMS structure and bonded to the bond ring. The MEMS structure has an upper surface, and the cap structure has a lower surface facing the upper surface of the MEMS structure. Dimples of eutectic material are present on the upper surface of the MEMS structure.

• The semiconductor device includes a semiconductor layer, MEMS structure, bond ring, and cap structure.
• The MEMS structure is defined within the semiconductor layer.
• The cap structure is positioned over the MEMS structure and bonded to the bond ring.
• Dimples of eutectic material are present on the upper surface of the MEMS structure.

Potential applications of this technology:

• MEMS devices: The semiconductor device can be used in various MEMS applications such as sensors, actuators, and switches.
• Semiconductor manufacturing: The technology can be utilized in the fabrication of semiconductor devices with MEMS structures.

Problems solved by this technology:

• Integration: The semiconductor device allows for the integration of MEMS structures within a semiconductor layer, enabling compact and efficient designs.
• Bonding: The bond ring and cap structure provide a reliable bonding mechanism for the MEMS structure, ensuring proper functionality.

Benefits of this technology:

• Miniaturization: The integration of MEMS structures within the semiconductor layer allows for smaller and more compact devices.
• Improved performance: The reliable bonding provided by the bond ring and cap structure ensures the proper functioning of the MEMS structure, leading to improved device performance.
• Manufacturing efficiency: The technology simplifies the manufacturing process by enabling the fabrication of MEMS devices within the semiconductor layer, reducing the need for additional assembly steps.

Original Abstract Submitted

in some embodiments, a semiconductor device is provided. the semiconductor device includes a semiconductor layer, a micro-electromechanical systems (mems) structure defined in the semiconductor layer, a bond ring over the semiconductor layer, and a cap structure over the mems structure and bonded to the bond ring. the mems structure has an upper surface and the cap structure has a lower surface facing the upper surface of the mems structure. dimples of eutectic material are on the upper surface of the mems structure.