SYSTEMS AND METHODS OF CONTROL FOR PLASMA PROCESSING

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SYSTEMS AND METHODS OF CONTROL FOR PLASMA PROCESSING

This abstract first appeared for US patent application 19019200 titled 'SYSTEMS AND METHODS OF CONTROL FOR PLASMA PROCESSING

Original Abstract Submitted

A plasma processing apparatus includes a plasma processing chamber, a source power (SP) control path configured to generate a plasma in the processing chamber by generating SP pulses according to SP pulse parameters, and a timing circuit coupled to the SP control path. The timing circuit is configured to generate a delay causing a nonzero offset duration separating trailing edges of the SP pulses and leading edges of bias power (BP) pulses, and to output a trigger signal immediately following the nonzero offset duration. The plasma processing apparatus further includes a BP control path coupled to the timing circuit and configured to generate BP pulses triggered by the trigger signal and to couple the BP pulses to a substrate disposed in the processing chamber. The BP pulses are generated according to BP pulse parameters that are separate from the SP pulse parameters.