19018319. PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD (Tokyo Electron Limited)
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
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PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
This abstract first appeared for US patent application 19018319 titled 'PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
Original Abstract Submitted
A plasma processing apparatus disclosed herein includes a chamber, a substrate support, a plasma generator, at least one electromagnet, and a power source. The substrate support is provided in the chamber. The substrate support includes a first region on which a substrate is placeable and a second region which surrounds the first region and on which an edge ring is placed. The plasma generator is configured to generate a plasma in the chamber. The at least one electromagnet is configured to generate a magnetic field localized in an annular space above the edge ring. The power source is electrically connected to the at least one electromagnet and is configured to adjust a strength of the magnetic field.