19015772. PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD (Tokyo Electron Limited)
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
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PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
This abstract first appeared for US patent application 19015772 titled 'PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
Original Abstract Submitted
In a plasma processing apparatus disclosed, a controller performs repetition of a cycle. The cycle includes supplying a pulse of a source high-frequency power from a high-frequency power supply for generating plasma from gas in a chamber, and supplying a pulse of an electric bias to a substrate support from a bias power supply. The pulse of the electric bias includes a direct current voltage pulse periodically generated at a bias frequency of 1 MHz or less. A repetition frequency of the cycle is 5 kHz or more. A start timing of the pulse of the electric bias is simultaneous with or earlier than a stop timing of the pulse of the source high-frequency power. A stop timing of the pulse of the electric bias is later than the stop timing of the pulse of the source high-frequency power.