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19014440. DISPLAY DEVICE AND FABRICATION METHOD THEREOF (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)

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DISPLAY DEVICE AND FABRICATION METHOD THEREOF

Organization Name

SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor(s)

Hisao Ikeda of Zama JP

Tomoya Aoyama of Atsugi JP

Kensuke Yoshizumi of Atsugi JP

DISPLAY DEVICE AND FABRICATION METHOD THEREOF

This abstract first appeared for US patent application 19014440 titled 'DISPLAY DEVICE AND FABRICATION METHOD THEREOF

Original Abstract Submitted

A high-resolution display device is provided. The display device includes a plurality of light-emitting units emitting light of different colors. The light-emitting unit has a microcavity structure and intensifies light with a specific wavelength. In the light-emitting units emitting light of different colors, reflective layers with different thicknesses are formed, an insulating layer is formed to cover the reflective layers, and then a top surface of the insulating layer is subjected to planarization treatment, whereby an insulating layer with different thicknesses is formed. After that, light-emitting elements emitting white light are formed over the planarized top surface of the insulating layer to overlap with the respective reflective layers, whereby the light-emitting units that intensify different colors due to different optical path lengths are separately formed.

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