LITHOGRAPHY METHOD FOR POSITIVE TONE DEVELOPMENT

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Ming-Hui Weng of New Taipei City TW

Chen-Yu Liu of Hsinchu County TW

Cheng-Han Wu of Taichung City TW

Ching-Yu Chang of Yilang County TW

Chin-Hsiang Lin of Hsinchu City TW

LITHOGRAPHY METHOD FOR POSITIVE TONE DEVELOPMENT

This abstract first appeared for US patent application 19011395 titled 'LITHOGRAPHY METHOD FOR POSITIVE TONE DEVELOPMENT

Original Abstract Submitted

A method includes illuminating radiation to a resist layer over a substrate to pattern the resist layer. The patterned resist layer is developed by using a positive tone developer. The patterned resist layer is rinsed using a basic aqueous rinse solution. A pH value of the basic aqueous rinse solution is lower than a pH value of the developer, and a rinse temperature of rinsing the patterned resist layer is in a range of about 20° C. to about 40° C.