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19010795. BLOCK FAILURE PROTECTION FOR ZONE MEMORY SYSTEM (Micron Technology, Inc.)

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BLOCK FAILURE PROTECTION FOR ZONE MEMORY SYSTEM

Organization Name

Micron Technology, Inc.

Inventor(s)

Sanjay Subbarao of Irvine CA US

BLOCK FAILURE PROTECTION FOR ZONE MEMORY SYSTEM

This abstract first appeared for US patent application 19010795 titled 'BLOCK FAILURE PROTECTION FOR ZONE MEMORY SYSTEM

Original Abstract Submitted

Various embodiments provide block failure protection for a memory sub-system that supports zones, such a memory sub-system that uses a RAIN (redundant array of independent NAND-type flash memory devices) technique for data error-correction. For some embodiments, non-parity zones of a memory sub-system that are filling up at a similar rate are matched together, a parity is generated for stored data from across the matching zones, and the generated parity is stored in a parity zone of the memory device.

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