19010305. SEMICONDUCTOR MEMORY DEVICE (Semiconductor Energy Laboratory Co., Ltd.)
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Semiconductor Energy Laboratory Co., Ltd.
Inventor(s)
Yasuhiko Takemura of Isehara JP
SEMICONDUCTOR MEMORY DEVICE
This abstract first appeared for US patent application 19010305 titled 'SEMICONDUCTOR MEMORY DEVICE
Original Abstract Submitted
The memory capacity of a DRAM is enhanced. A semiconductor memory device includes a driver circuit including part of a single crystal semiconductor substrate, a multilayer wiring layer provided over the driver circuit, and a memory cell array layer provided over the multilayer wiring layer. That is, the memory cell array overlaps with the driver circuit. Accordingly, the integration degree of the semiconductor memory device can be increased as compared to the case where a driver circuit and a memory cell array are provided in the same plane of a substrate containing a singe crystal semiconductor material.