19010184. SEMICONDUCTOR STRUCTURE (NANYA TECHNOLOGY CORPORATION)
SEMICONDUCTOR STRUCTURE
Organization Name
Inventor(s)
Mao-Ying Wang of New Taipei City TW
Yu-Ting Lin of New Taipei City TW
SEMICONDUCTOR STRUCTURE
This abstract first appeared for US patent application 19010184 titled 'SEMICONDUCTOR STRUCTURE
Original Abstract Submitted
A semiconductor structure is provided. The semiconductor structure includes a landing pad layer, a middle patterned dielectric layer, a top patterned dielectric layer, and a plurality of trench conductive layers. The middle patterned dielectric layer is disposed over the landing pad layer, in which the middle patterned dielectric layer includes a plurality of first openings. The top patterned dielectric layer is disposed over the middle patterned dielectric layer, in which the top patterned dielectric layer includes a plurality of second openings substantially aligned with the first openings, respectively. Each of the trench conductive layers is disposed through a portion of one of the second openings and a portion of one of the first openings, and each of the trench conductive layers has two side layers opposite to each other.