19009252. METHODS OF PROCESSING SUBSTRATES AND APPARATUSES THEREOF (SAMSUNG ELECTRONICS CO., LTD.)
METHODS OF PROCESSING SUBSTRATES AND APPARATUSES THEREOF
Organization Name
Inventor(s)
Changheon Lee of Hwaseong-si KR
METHODS OF PROCESSING SUBSTRATES AND APPARATUSES THEREOF
This abstract first appeared for US patent application 19009252 titled 'METHODS OF PROCESSING SUBSTRATES AND APPARATUSES THEREOF
Original Abstract Submitted
A substrate processing method includes inserting a substrate from an outside into a processing space, supplying a process gas from a gas supply unit to the processing space, producing plasma based on the process gas, performing an etching process for the substrate using ions included in the plasma, and discharging a processed gas produced in the etching process through a discharge part. The discharge part includes a first slit extending through a flange part, and a second slit connected to the first slit while extending through a side wall part connected to the flange part. A vertical length of the first slit is equal to a vertical length of the second slit. A horizontal length of the first slit is about 5 times to about 7 times the vertical length of the first slit.
