19007772. LOCALIZED STRESS MODULATION BY IMPLANT TO BACK OF WAFER (Applied Materials, Inc.)
LOCALIZED STRESS MODULATION BY IMPLANT TO BACK OF WAFER
Organization Name
Inventor(s)
Sony Varghese of Manchester MA US
Pradeep Subrahmanyan of Cupertino CA US
Dennis Rodier of Francestown NH US
LOCALIZED STRESS MODULATION BY IMPLANT TO BACK OF WAFER
This abstract first appeared for US patent application 19007772 titled 'LOCALIZED STRESS MODULATION BY IMPLANT TO BACK OF WAFER
Original Abstract Submitted
Embodiments herein are directed to localized stress modulation by implanting a first side of a substrate to reduce in-plane distortion along a second side of the substrate. In some embodiments, a method may include providing a substrate, the substrate comprising a first main side opposite a second main side, wherein a plurality of features are disposed on the first main side, performing a metrology scan to the first main side to determine an amount of distortion to the substrate due to the formation of the plurality of features, and depositing a stress compensation film along the second main side of the substrate, wherein a stress and a thickness of the stress compensation film is determined based on the amount of distortion to the substrate. The method may further include directing ions to the stress compensation film in an ion implant procedure.