19005195. Multi-Gate Hybrid-Channel Field Effect Transistor (Huawei Technologies Co., Ltd.)
Multi-Gate Hybrid-Channel Field Effect Transistor
Organization Name
Inventor(s)
Krishna Kumar Bhuwalka of Leuven BE
Multi-Gate Hybrid-Channel Field Effect Transistor
This abstract first appeared for US patent application 19005195 titled 'Multi-Gate Hybrid-Channel Field Effect Transistor
Original Abstract Submitted
A multi-gate hybrid-channel field-effect transistor (FET) structure of an integrated device like a nanosheet device or a forksheet device comprises a substrate layer, a first layer stack and a second layer stack arranged side by side on the substrate layer, a first and second additional semiconductor channel layer arranged respectively besides the second layer stack, and a dielectric wall arranged on the substrate layer between the first layer stack and the second layer stack. The first and second layer stack each comprise one or more semiconductor channel layers and gate layers stacked alternatingly with respective surfaces parallel to the surface of the substrate layer. Respective surfaces of the first and second additional semiconductor channel layer are parallel to each other and perpendicular to the surface of the substrate layer.