19004725. MEMORY DEVICE INCLUDING DIFFERENT DIELECTRIC STRUCTURES BETWEEN BLOCKS (Micron Technology, Inc.)

MEMORY DEVICE INCLUDING DIFFERENT DIELECTRIC STRUCTURES BETWEEN BLOCKS

Organization Name

Micron Technology, Inc.

Inventor(s)

Paolo Tessariol of Arcore IT

David H. Wells of Boise ID US

Umberto Maria Meotto of Dietlikon CH

MEMORY DEVICE INCLUDING DIFFERENT DIELECTRIC STRUCTURES BETWEEN BLOCKS

This abstract first appeared for US patent application 19004725 titled 'MEMORY DEVICE INCLUDING DIFFERENT DIELECTRIC STRUCTURES BETWEEN BLOCKS

Original Abstract Submitted

Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes levels of conductive materials interleaved with levels of dielectric materials; memory cell strings including respective pillars extending through the levels of conductive materials and the levels of dielectric materials; a first dielectric structure formed in a first slit through the levels of conductive materials and the levels of dielectric materials; a second dielectric structure formed in a second slit through the levels of conductive materials and the levels of dielectric materials; the first dielectric structure and the second dielectric structure separating the levels of conductive materials, the levels of dielectric materials, and the pillars into separate portions, and the first and second dielectric structures including different widths.