19004463. PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS (Tokyo Electron Limited)
PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
Organization Name
Inventor(s)
Yusuke Shimizu of Gyeonggi-do KR
PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
This abstract first appeared for US patent application 19004463 titled 'PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
Original Abstract Submitted
A technology for reducing variation in an ion flux distribution will be provided. There is provided a plasma processing method for performing plasma processing in a plasma processing apparatus including a chamber and a substrate support disposed in the chamber, the plasma processing performed on a substrate placed at the substrate support by generating plasma in the chamber. The plasma processing method includes: (a) the step of storing, in memory, first distribution data that is data relating to a distribution of an ion flux that occurs between the plasma generated in the chamber and a first substrate placed at the substrate support; (b-a) the step of placing a second substrate at the substrate support; and (b-b) a plasma processing step of generating the plasma in the chamber based on the first distribution data to perform the plasma processing on the second substrate.
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