19004044. SINGLE PHOTON AVALANCHE DIODE (SK HYNIX INC.)
SINGLE PHOTON AVALANCHE DIODE
Organization Name
Inventor(s)
Soon Yeol Park of Icheon-si KR
SINGLE PHOTON AVALANCHE DIODE
This abstract first appeared for US patent application 19004044 titled 'SINGLE PHOTON AVALANCHE DIODE
Original Abstract Submitted
A single photon avalanche diode may include a first diode, a second diode and a third diode. The first diode includes a first PN junction vertically spaced from a light-receiving surface by a first depth. The second diode is formed to be partially contacted with the first diode. The second diode includes a second PN junction vertically spaced from the light-receiving surface by a second depth greater than the first depth. The third diode is formed to be partially contacted with the second diode. The third diode includes a third PN junction spaced from the light-receiving surface by a third depth greater than the second depth. The first to third diodes include different breakdown voltages.