19003119. SEMICONDUCTOR MEMORY DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Hyeoungwon Seo of Yongin-si KR
SEMICONDUCTOR MEMORY DEVICE
This abstract first appeared for US patent application 19003119 titled 'SEMICONDUCTOR MEMORY DEVICE
Original Abstract Submitted
A semiconductor memory device includes a word line extending in a vertical direction, a semiconductor pattern having a ring-shaped horizontal cross-section that extends around the word line, a bit line at a first end of the semiconductor pattern, and a capacitor structure at second end of the semiconductor pattern. The capacitor structure includes a lower electrode layer electrically connected to the second end of the semiconductor pattern, having a ring-shaped horizontal cross-section, and including a connector extending in the vertical direction. A first segment extends in a horizontal direction from an upper end of the connector, and a second segment extends in the horizontal direction from a lower end of the connector. An upper electrode layer surrounded by the lower electrode layer, extends in the vertical direction, and a capacitor dielectric layer is between the lower electrode layer and the upper electrode layer.