INTEGRATED CIRCUIT STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Hsia-Wei Chen of Taipei City TW

Fu-Ting Sung of Taoyuan City TW

Yu-Wen Liao of New Taipei City TW

Wen-Ting Chu of Kaohsiung City TW

Fa-Shen Jiang of Taoyuan City TW

Tzu-Hsuan Yeh of Taoyuan City TW

INTEGRATED CIRCUIT STRUCTURE

This abstract first appeared for US patent application 19002429 titled 'INTEGRATED CIRCUIT STRUCTURE

Original Abstract Submitted

An integrated circuit structure includes a plurality of transistors, an interconnect layer, and a memory stack. The interconnect layer includes an interlayer dielectric (ILD) and a conductive structure embedded in the ILD. The conductive structure includes a barrier layer and a conductive filling material surrounded by the barrier layer in a cross-sectional view. The memory stack is over the interconnect layer. The memory stack includes a bottom electrode extending across the conductive structure in the cross-sectional view, a resistance switching layer over the bottom electrode, and a top electrode over the resistance switching layer. In the cross-sectional view, an interface formed by the bottom electrode and the barrier layer has a topmost point higher than a topmost point of an interface formed by the bottom electrode and the conductive filling material.