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19001893. PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD (Tokyo Electron Limited)

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PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Organization Name

Tokyo Electron Limited

Inventor(s)

Chishio Koshimizu of Miyagi JP

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

This abstract first appeared for US patent application 19001893 titled 'PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Original Abstract Submitted

A plasma processing apparatus includes a chamber, a substrate support, a gas supplier for supplying gas into the chamber, a radio-frequency power supply for supplying a source radio-frequency power to generate plasma, and a bias power supply for generating electric bias. During a first processing period, the radio-frequency power supply uses frequencies, which are included in a first frequency set determined to reduce a degree of reflection of the source radio-frequency power from a load, as source frequencies of the source radio-frequency power for each of phase periods in a waveform period of the electric bias. During a second processing period, the radio-frequency power supply uses frequencies, which are included in a second frequency set different from the first frequency set and determined to reduce the degree of reflection, as the source frequencies for each of the phase periods.

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